Atomic layer deposition of aluminum oxide films on graphene

International Conference on Functional Materials and Nanotechnologies 2013

材料科学;物理学

Rammula, Raul^1 ; Aarik, Lauri^1 ; Kasikov, Arne^1 ; Kozlova, Jekaterina^1 ; Kahro, Tauno^1 ; Matisen, Leonard^1 ; Niilisk, Ahti^1 ; Alles, Harry^1 ; Aarik, Jaan^1

Institute of Physics, University of Tartu, 51014 Tartu, Estonia^1

关键词: Al2O3 films;    Electron beam evaporation;    Incubation periods;    Low temperatures;    Seed layer;    Trimethyl aluminums;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/49/1/012014/pdf
DOI  :  10.1088/1757-899X/49/1/012014

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Seed-layer approach was studied to initiate atomic layer deposition (ALD) of Al2O3films on graphene. Low-temperature ALD and electron beam evaporation (EBE) were applied for seed-layer preparation before deposition of the dielectric at 200 °C using trimethyl-aluminum and water or ozone as precursors. To characterize nucleation of the films and possible influence of the ALD processes on the quality of graphene, properties of graphene and Al2O3films were investigated by Raman spectroscopy, X-ray fluorescence and X-ray photoelectron spectroscopy methods. The results suggest that seed layer formation by low-temperature ALD was more efficient in the O3-based process than in the H2O-based one while EBE seed layer provided fastest growth of Al2O3together with minimum incubation period.