Epitaxial ZnO on p-Si and its MSM Structure Photoconductive Ultraviolet Detector

2019 2nd International Conference on Advanced Materials, Intelligent Manufacturing and Automation

Zhong, Wen'An^1^2 ; Liu, Jianfeng^1^2 ; Zhao, Yu^1^2 ; Zhang, Quanlin^1^2 ; Zhao, Yijun^1^2 ; Wang, Yuchao^1^2

Xichang Satellite Launch Center, Xichang, Sichuan

615000, China^1

Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, Guangdong

510000, China^2

关键词: Crystal qualities;    Electron beam evaporation;    Inter-digitated electrodes;    Photoconductive ultraviolet detectors;    Photoconductive UV detectors;    Plasma-assisted molecular beam epitaxy;    Semiconductor process;    Spectral response;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/569/2/022019/pdf
DOI  :  10.1088/1757-899X/569/2/022019

来源: IOP

【 摘 要 】

In this work, a plasma-assisted molecular-beam epitaxy (PA-MBE) was used to prepare high-quality ZnO thin films on p-type silicon substrates. Be/BeO composite buffer layers were designed to improve the crystal quality of ZnO thin films. Based on the ZnO thin films, we fabricated interdigitated electrode MSM structure photoconductive UV detector by lithography, electron beam evaporation and other traditional semiconductor processes. In addition, dark current, spectral response of the UV detector were measured by responsivity testing system to explore the application of ZnO based UV detectors.