Influence of anneal temperature in air on surface morphology and photoluminescence of ZnO thin films

2018 4th International Conference on Smart Material Research

Guan, Sujun^1 ; Hao, Liang^2 ; Murayama, Mariko^1 ; Xie, Xiaohua^3 ; Komuro, Shuji^4 ; Zhao, Xinwei^1

Department of Physics, Tokyo University of Science, Shinjuku-ku, Tokyo

162-8601, Japan^1

College of Mechanical Engineering, Tianjin University of Science and Technology, Hexi District, Tianjin

300222, China^2

College of Materials Science and Engineering, Yangtze Normal University, Fuling District, Chongqing

408100, China^3

Faculty of Science and Engineering, Toyo University, Saitama, Kawagoe

350-8585, Japan^4

关键词: Anneal temperatures;    Annealing process;    Crystal qualities;    Deep level emission;    Electronic defects;    Electronic transition;    Near band edge emissions;    Visible emissions;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/522/1/012004/pdf
DOI  :  10.1088/1757-899X/522/1/012004

来源: IOP

【 摘 要 】

The influence of anneal temperature in air ambient under atmospheric pressure on the surface morphology and photoluminescence of ZnO thin films grown on quartz substrate by RF sputtering has been investigated. The characterization of ZnO thin films was carried out by X-ray diffraction (XRD), atomic force microscope (AFM), DRUV-vis spectra (DRUV-vis), photoluminescence (PL), X-ray photoelectron spectroscopy (XPS). XRD analysis shows the crystal quality of ZnO thin films becomes better after annealing in air. AFM results shows that the influence of anneal temperature on surface morphology is obvious. DRUV-vis results reveal that the transmittance increases in the region from 400 nm to 500 nm after annealing, without affecting the band gap. PL spectra of ZnO thin films by annealed at various temperatures consists of a near band edge emission around 380 nm and visible emissions due to the electronic defects, which are related to deep level emissions, which are generated during annealing process. The evolution of defects is analysed by PL spectra based on the energy of the electronic transitions. XPS results hint that the obvious change of oxygen species on the surface of ZnO, especially the increased oxygen vacancies with increasing the anneal temperature.