Interface characterization of nanoscale SiOx layers grown on RF plasma hydrogenated silicon

19th International Summer School on Vacuum, Electron and Ion Technologies

Halova, E.^1 ; Kojuharova, N.^1 ; Alexandrova, S.^1 ; Szekeres, A.^2

Department of Applied Physics, Technical University of Sofia, 8 St. Kl. Ohridski blvd., Sofia

1797, Bulgaria^1

Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, Sofia

1784, Bulgaria^2

关键词: C-V characteristic;    Electrical characterization;    Ellipsometric data;    Generalized frequencies;    Interface characterization;    Interface trap density;    Multiple frequency;    Two-frequency method;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/700/1/012029/pdf
DOI  :  10.1088/1742-6596/700/1/012029

来源: IOP

【 摘 要 】

In the present paper, results are presented on electrical characterization of the interface Si/SiOx, formed by oxidation on Si wafers previously exposed to rf hydrogen plasma. As tools of investigations, multiple frequency C-V and G-V measurements were applied. The data analysis was performed using a two-frequency method to extract a generalized frequency independent C-V characteristic. The interface trap densities were evaluated from the generalized C-V data by comparison with theoretical data for an ideal interface. A set of localized states, acting as interface traps, was found that characterize the interface of Si to substoichiometric SiOx, layer with x