Electrical parameters of thin nanoscale SiOx layers grown on plasma hydrogenated silicon

18th International School on Condensed Matter Physics: "Challenges of Nanoscale Science: Theory, Materials, Applications"

Alexandrova, S.^1 ; Szekeres, A.^2 ; Halova, E.^1 ; Kojuharova, N.^1

Department of Applied Physics, Technical University, 8 Kl. Ohridski Blvd., Sofia

1797, Bulgaria^1

Institute of Solid State Physics, 72 Tzarigradsko Chaussee, Sofia

1784, Bulgaria^2

关键词: C-V characteristic;    Electrical characterization;    Electrical parameter;    Generalized frequencies;    Interface trap density;    Multiple frequency;    Plasma hydrogenated;    Two-frequency method;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/558/1/012054/pdf
DOI  :  10.1088/1742-6596/558/1/012054

来源: IOP

【 摘 要 】

In the present paper results are presented on electrical characterization of the interface Si/SiOx, formed by oxidation on Si wafers, previously exposed to rf hydrogen plasma. As a tool of investigations multiple frequency C-V and G-V measurements are applied. The data analysis was performed using two-frequency method to extract generalized frequency independent C-V characteristic. Interface trap densities were evaluated from the generalized C-V data by comparison with theoretical data for an ideal interface. A set of localized states, acting as interface traps, was found that characterize the interface of Si to substoichiometric SiOx, layer with x