18th International School on Condensed Matter Physics: "Challenges of Nanoscale Science: Theory, Materials, Applications" | |
Electrical parameters of thin nanoscale SiOx layers grown on plasma hydrogenated silicon | |
Alexandrova, S.^1 ; Szekeres, A.^2 ; Halova, E.^1 ; Kojuharova, N.^1 | |
Department of Applied Physics, Technical University, 8 Kl. Ohridski Blvd., Sofia | |
1797, Bulgaria^1 | |
Institute of Solid State Physics, 72 Tzarigradsko Chaussee, Sofia | |
1784, Bulgaria^2 | |
关键词: C-V characteristic; Electrical characterization; Electrical parameter; Generalized frequencies; Interface trap density; Multiple frequency; Plasma hydrogenated; Two-frequency method; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/558/1/012054/pdf DOI : 10.1088/1742-6596/558/1/012054 |
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来源: IOP | |
【 摘 要 】
In the present paper results are presented on electrical characterization of the interface Si/SiOx, formed by oxidation on Si wafers, previously exposed to rf hydrogen plasma. As a tool of investigations multiple frequency C-V and G-V measurements are applied. The data analysis was performed using two-frequency method to extract generalized frequency independent C-V characteristic. Interface trap densities were evaluated from the generalized C-V data by comparison with theoretical data for an ideal interface. A set of localized states, acting as interface traps, was found that characterize the interface of Si to substoichiometric SiOx, layer with x
【 预 览 】
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Electrical parameters of thin nanoscale SiOx layers grown on plasma hydrogenated silicon | 757KB | download |