GaN MOSFET with Boron Trichloride-Based Dry Recess Process

11th Asia Pacific Conference on Plasma Science and Technology;25th Symposium on Plasma Science for Materials

Jiang, Y.^1,2 ; Wang, Q.P.^1,2 ; Tamai, K.^1 ; Miyashita, T.^3 ; Motoyama, S.^3 ; Wang, D.J.^2 ; Ao, J.P.^1 ; Ohno, Y.^1

Institute of Technology and Science, University of Tokushima, Japan^1

School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, China^2

Research and Development Department, SAMCO Inc., Japan^3

关键词: AlGaN/GaN heterostructures;    Boron trichloride;    Etching gas;    Field-effect mobilities;    Interface state density;    MOS-FET;    Recessed gate;    Silicon tetrachloride;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/441/1/012025/pdf
DOI  :  10.1088/1742-6596/441/1/012025

来源: IOP

【 摘 要 】

The dry recessed-gate GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure using boron trichloride (BCl3) as etching gas were fabricated and characterized. Etching with different etching power was conducted. Devices with silicon tetrachloride (SiCl4) etching gas were also prepared for comparison. Field-effect mobility and interface state density were extracted from current-voltage (I-V) characteristics. GaN MOSFETs on AlGaN/GaN heterostructure with BCl3based dry recess achieved a high maximum electron mobility of 141.5 cm2V-1s-1and a low interface state density.