Synthesis of bilayer MoS2 and corresponding field effect characteristics

33rd International Conference on the Physics of Semiconductors

Fang, Mingxu^1 ; Feng, Yulin^1 ; Wang, Fang^1 ; Yang, Zhengchun^1 ; Zhang, Kailiang^1

School of Electronic Information Engineering, Tianjin Key Laboratory of Thin Film Electronics and Communication Devices, Tianjin University of Technology, 391 West Binshui Road, Tianjin

300384, China^1

关键词: Back gates;    Field effects;    Field-effect mobilities;    Hexagonal nanosheets;    Layer number;    Nanoelectronic devices;    On/off ratio;    Transition metal dichalcogenides;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012032/pdf
DOI  :  10.1088/1742-6596/864/1/012032

来源: IOP

【 摘 要 】

Two-dimensional transition-metal dichalcogenides such as MoS2are promising materials for next-generation nano-electronic devices. The physical properties of MoS2are determined by layer number according to the variation of band-gap. Here, we synthesize large-size bilayer-MoS2with triangle and hexagonal nanosheets in one step by chemical vapor deposition, Monolayer and bilayer-MoS2back-gate field effect transistors are also fabricated and the performance including mobility and on/off ratios are compared. The bilayer-MoS2back-gate field effect transistor shows superior performance with field effect mobility of ∼21.27cm2V-1s-1, and Ion/Ioffratio of ∼3.9×107.