Technology and characteristics of the transistor with a channel based on graphene

1st International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

无线电电子学

Shostachenko, S.A.^1 ; Zebrev, G.I.^1 ; Zakharchenko, R.V.^1 ; Leshchev, S.V.^1 ; Komissarov, I.V.^2

National Research Nuclear University, MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow

115409, Russia^1

Belarusian State University of Informatics and Radioelectronics, P. Brovki street 6, Minsk

220013, Belarus^2

关键词: Back gates;    Field effects;    I;    V curve;    Oxygen plasmas;    Photolithographic masks;    Silicon substrates;    Test structure;    Thermal oxidation;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/151/1/012015/pdf
DOI  :  10.1088/1757-899X/151/1/012015

来源: IOP

【 摘 要 】

In this article we have studied the current-voltage characteristics of the graphene- based transistor. The test structure of graphene transistor was fabricated with the back gate. Graphene has been produced by chemical vapor deposition, and then transferred to the silicon dioxide on a silicon wafer. The channel of the transistor has been formed by etching in oxygen plasma through a photolithographic mask. Metals electrodes of the drain, source and gate were deposited by resistive evaporation in a vacuum. It was used titanium / gold with a thickness of 20/200 nm. In the case of the back gate, silicon dioxide was used, obtained by thermal oxidation of the silicon substrate. The field effect was demonstrated. With IV curves graphene parameters were defined.