Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

18th International School on Condensed Matter Physics: "Challenges of Nanoscale Science: Theory, Materials, Applications"

Hadjichristov, G.B.^1 ; Ivanov, Tz E^1 ; Marinov, Y.G.^1

Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko chaussee, Sofia

1784, Bulgaria^1

关键词: Conductive surfaces;    Electric field distributions;    Electrical conduction;    Field-effect mobilities;    Nanostructured dielectrics;    Nanostructured ultrathin layer;    Performance parameters;    Plastic electronics;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/558/1/012061/pdf
DOI  :  10.1088/1742-6596/558/1/012061

来源: IOP

【 摘 要 】

Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+at the fluence of 3.2 × 1016cm-2the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.