Gallium Nitride FET Model

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Orlov, V.V.^1 ; Zebrev, G.I.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Compact model;    Fet modeling;    Interface trap density;    IV characteristics;    Operation mode;    Physics-based;    Self-heating effect;    Source-drain;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012007/pdf
DOI  :  10.1088/1757-899X/475/1/012007

来源: IOP

【 摘 要 】

We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities and self-heating effects.