Development of compact Schottky diode model on GaN

International Scientific and Practical Conference on Innovations in Engineering and Technology

工业技术;自然科学

Petrov, M.N.^1

Yaroslav-the-Wise Novgorod State University, ul. B. St. Peterburgskaya, 41, Veliky Novgorod

173004, Russia^1

关键词: Compact model;    Electrophysical characteristics;    Modified model;    P-n junction;    Sapphire substrates;    Schottky diode modeling;    Schottky diodes;    Technological process;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/441/1/012036/pdf
DOI  :  10.1088/1757-899X/441/1/012036

来源: IOP

【 摘 要 】

In the article the technique of formation of compact (SPICE) model of Schottky diode on GaN, manufactured by heteroepitaxial growth on a sapphire substrate (Al2O3) is considered. As a compact model, the modified model of a conventional diode on the p-n junction is used. The procedure is proposed for extraction of Spice parameters of the Schottky diode model on the basis of experimental volt-ampere (VAC) and volt-farad characteristics (VFC) using the Matlab computer mathematics system. The procedure for extracting the parameters of the compact model and the electrophysical characteristics of the device can be useful for commissioning the technological process for Schottky power diodes production.