Extraction of Average Interface Trap Density using Capacitance-Voltage Characteristic at SiGe p-FinFET and Verification using Terman's Method

Voltage difference;Interface trap density;SiGe;Terman;;s method;p-FinFET;621

공과대학 전기·정보공학부 ;

University:서울대학교 대학원

关键词: Voltage difference;    Interface trap density;    SiGeTerman;    ;    s method;    p-FinFET;    621;   

Others  :  http://s-space.snu.ac.kr/bitstream/10371/122780/1/000000131859.pdf

美国|英语

来源: Seoul National University Open Repository

【 摘 要 】

In this paper, it was proposed and verified by simulation that a new method can extract average interface trap density simply and accurately using difference between ideal capacitance-voltage curve and stretch-out capacitance curve with high interface trap density in SiGe p-FinFET.Two capacitance-voltage curves, one is ideal and the other is stretch-out due to high interface trap density at interface of oxide layer and channel, in high frequency were found by SiGe p-FinFET simulation. Average interface trap density was extracted by using two capacitance-voltage curves and two methods at the same energy band region. One is Terman’s method and the other is the method proposed in this paper using voltage difference between two capacitance-voltage curves.Comparing the average interface trap density found by method using voltage difference with Terman;;s method, it was verified that the method using voltage difference is reasonable to extract average interface trap density in SiGe p-FinFET with high interface trap density.