Observation of plasma sheath modulation in the plasma bipolar junction transistor

plasma;bipolar junction transistor;sheath

Houlahan, Thomas ; Eden ; James G.

关键词: plasma;    bipolar junction transistor;    sheath;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/29761/Houlahan_Thomas.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Modulation of the plasma sheath in a plasma bipolar junction transistor (PBJT) is observed for base inputs of less than one volt. Using the recorded data, along with a collisional, high-voltage sheath model developed herein, a 359% increase in the secondary electron emission coefficient of the exposed silicon surface is inferred. Additionally, the pressure dependence of these devices is explored, with the data suggesting that smaller devices would exhibit both faster switching and higher small signal gains.