CMOS integrated sensor circuit for temperature measurement based on 50 nm technology

The Journal of Engineering

关键词: voltage drop;    operational ampliher;    LTSPICE;    temperature -30 degC to 125 degC;    temperature measurement;    CMOS integrated sensor circuit;    NPN transistor;    bipolar junction transistor;    bias circuit;    fully-integrated complementary metal-oxide semiconductor sensor;    size 50 nm;    temperature sensor;    implanted integrated circuit;    thermal sensing;    thermal module;   

DOI  :  10.1049/joe.2017.0363

学科分类：工程和技术（综合）

来源: IET

【 摘 要 】

A fully-integrated complementary metal–oxide semiconductor sensor using NPN transistors for temperature measurement is presented. The main purpose of the device is to monitor the temperature for implanted integrated circuits and to ensure the safe operation by monitoring the temperature on-chip. This study adopted a behavioural simulator that uses LTSPICE for a temperature sensor for performing the rapid and accurate simulation. It is advantageous in 50 nm technique to design the circuits. The integrated sensor circuit consists of a bias circuit, an operational amplifier, and a thermal module. A high sensitivity of 5.9 mV/°C in the output voltage circuit has been measured, the linear dependence of voltage drop across the bipolar junction transistor on temperature, in a range from −30 to 125°C, has been used for thermal sensing.

【 授权许可】

CC BY