Photonics Integration Devices and Technologies.

Vawter, G. A. ; Lin, S. Y. ; Sullivan, C. T. ; Zubrzycki, W. J. ; Chow, W. W.

Technical Information Center Oak Ridge Tennessee

关键词: Aluminium arsenides;    Gallium arsenides;    Etching;    Oxidation;    Semiconductor lasers;   

RP-ID  :  DE2001780313

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

We have used selective AlGaAs oxidation, dry-etching, and high-gain semiconductor laser simulation to create new in-plane lasers with interconnecting passive waveguides for use in high-density photonic circuits and future integration of photonics with electronics. Selective oxidation and doping of semiconductor heterostructures have made vertical cavity surface emitting lasers (VCSELs) into the world's most efficient low-power lasers. We apply oxidation technology to improve edge-emitting lasers and photonic-crystal waveguides, making them suitable for monolithic integrated microsystems. Two types of lasers are investigated: (1) a ridge laser with resonant coupling to an output waveguide; (2) a selectively-oxidized laser with a low active volume and potentially sub-milliAmp threshold current. Emphasis is on development of high-performance lasers suited for monolithic integration with photonic circuit elements.