Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint.

Johnston, S. W.

Technical Information Center Oak Ridge Tennessee

关键词: Meetings;    Photovoltaic cells;    Carrier lifetime;    Gallium nitrides;    Gallium arsenides;   

RP-ID  :  DE200215000060

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

Presented at the 2001 NCPV Program Review Meeting: Temp-dependent lifetime measurements can further characterize trapping and recombination. We did lifetime measurements on GaNAs/GaAs using photoconductive decay technique.