Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique

THIN SOLID FILMS

卷:518

Article; Proceedings Paper

Warrier, Anita R.¹  Deepa, K. G.¹  Sebastian, Tina¹  Kartha, C. Sudha¹  Vijayakumar, K. P.¹ 

[1] Cochin Univ Sci & Technol, Dept Phys, Cochin 682022, Kerala, India

关键词: Photothermal;    Thinfilm;    Mobility;    Carrier lifetime;    Surface recombination velocity;   

DOI  :  10.1016/j.tsf.2009.09.029

来源: Elsevier

【 摘 要 】

Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness < 1 mu m were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5 x 10(5) cm/s for CuInS2, 1 x 10(3) cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm(2)/V s for CuInS2, 32 cm(2)/V s for CuInSe2) and high minority carrier lifetime (0.35 mu s for CuInS2, 12 mu s for CuInSe2). (C) 2009 Elsevier B.V. All rights reserved.

【 授权许可】

Free