Etching of GaAs substrates to create As-rich surface

Bulletin of materials science

A Chanda¹  S Verma²  C Jacob¹ 

[1] Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India$$Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, IndiaMaterials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India$$;Institute of Physics, Bhubaneswar 751 005, India$$Institute of Physics, Bhubaneswar 751 005, IndiaInstitute of Physics, Bhubaneswar 751 005, India$$

关键词: Etching;    semi-insulating;    XPS spectrum.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Several different cleaning procedures for GaAs (100) substrates are compared using X-ray photoelectron spectroscopy and optical microscopy. This work emphasizes the effect of the last etching step: using either HCl, HF�?�ethanol (5%) or static deionized water after HCl cleaning. All the procedures except HCl solution (1 : 1) produce an As-rich surface. Also, none of the etchants except HF�?�ethanol solution produce Ga or As-rich (oxide free) surfaces. Optical microscopic study shows different etch pits produced due to etching in different solutions.

【 授权许可】

Unknown