Progress in Silicon Heterojunction Devices by Hot-Wire CVD.

Page, M. R. ; Iwaniczko, E. ; Wang, Q. ; Levi, D. H. ; Yan, Y. ; Branz, H. M. ; Wang, T. H. ; Yelundur, V. ; Rohatgi, A.

Technical Information Center Oak Ridge Tennessee

关键词: Silicon solar cells;    Chemical vapor deposition;    Heterojunctions;    Data analysis;    Fabrication;   

RP-ID  :  DE200415009888

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

We report on fabrication of silicon heterojunction (SHJ) solar cells based on Al-backed p-type silicon wafers, with hot-wire chemical vapor deposition (HWCVD) hydrogenated amorphous silicon (a-Si:H) emitter layers. The two-layer emitters are comprised of an extremely thin ((approx)5-nm) intrinsic a-Si:H (a-Si:H(i)) layer topped with a slightly thicker phosphorus-doped a Si:H layer (a-Si:H(n)). Open-circuit voltages (V(sub oc)) above 620 mV are routinely achieved with a maximum of over 640 mV, indicating effective passivation of the crystalline silicon (c-Si) surface by the thin a Si:H(i/n) stack. We used real-time spectroscopic ellipsometry (RTSE) as an in-situ diagnostic tool to monitor film thickness and roughness in real-time and to observe silicon crystallinity by further ex-situ data analysis.