High hydrogen sensitivity of vertically standing layered MoS2/Si heterojunctions

JOURNAL OF ALLOYS AND COMPOUNDS

卷:682

Article

Hao, Lanzhong¹  Liu, Yunjie¹  Gao, Wei¹  Liu, Yanmin¹  Han, Zhide¹  Yu, Lianqing¹  Xue, Qingzhong¹  Zhu, Jun² 

[1] China Univ Petr, Coll Sci, Qingdao 266580, Shandong, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

关键词: MoS2;    Thin films;    Heterojunctions;    Sensing;    ppm levels;   

DOI  :  10.1016/j.jallcom.2016.04.277

来源: Elsevier

【 摘 要 】

Molybdenum disulfide (MoS2) thin films are deposited onto silicon (Si) substrates using magnetron sputtering technique. Raman spectra show that the out-of-plane vibration is preferentially excited for the film. X-ray diffraction patterns further illustrate that the deposited MoS2 films have the preferential [100] orientation. These results demonstrate that the unit layers of S-Mo-S in the film are perpendicular to the substrate. This can supply high-speed paths for the transportation of the electron carriers along the out-of-plane orientation. Due to the unique vertically standing layered structure of the MoS2 film, the fabricated MoS2/Si sensor device exhibits excellent hydrogen (H-2) sensing properties. The device performance can be featured by a high sensitivity (687.3% under 100.0 ppm H-2), high detection resolution (a 1.0-ppm level), as well as fast response and recovery, and good reversibility. The sensing mechanisms were discussed based on the microstructural characteristics of the MoS2 film and the energy-band alignment near the MoS2/Si interface. The MoS2/Si heterojunctions proposed in this work might open new avenues for the development of future high-performance sensor devices. (C) 2016 Elsevier B.V. All rights reserved.

【 授权许可】

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