Growth and Characterization of GaInAsSb and AlGaAsSb on GaSb by Metal Organic Chemical Vapor Deposition.

Biefeld, R. M. ; Cederberg, J. G. ; Peake, G. M. ; Kurtz, S. R.

Technical Information Center Oak Ridge Tennessee

关键词: Chemical vapor deposition;    Crystal growth;    Epitaxy;   

RP-ID  :  DE2001760773

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

The growth conditions for GaInAsSb and A1GaAsSb using metal-organic chemical vapor deposition in a high speed rotating disk reactor are described. Trimethylindium, triethylgallium, arsine, and trimethylantimony were used as precursors for the growth of GaInAsSb. Triethylgallium, ethyldimethylamine alane, triethylantimony, and arsine were the precursors used the for the growth of A1GaSb. These materials were doped both n- and p-type using a mixture of diethyltellurium and diethylzinc as sources. An optimum growth temperature of 520degC was determined for the growth of A1GaAsSb. Growth at this temperature yielded a root mean square (rms) surface roughness of 0.142 nm. A1GaAsSb could be grown over the range of 500 to 600deC with somewhat rougher surfaces (rms>0.7nm). The photoluminescence was found to correlate with surface roughness, increasing with smoother surfaces. A1GaAsSb mesa isolated diodes were prepared and characterized. These diodes showed good current-voltage characteristics with breakdown voltages greater than -6 volts.