Low-temperature epitaxial Si on 4H-SiC using metal-induced crystallization

Materials Letters: X

G. Pfusterschmied¹  K. Hradil²  U. Schmid²  F. Triendl³  C. Zellner³  W. Artner³ 

[1] Corresponding author.;Center of X-ray Technology, TU Wien, Getreidemarkt 9, 1060 Vienna, Austria;Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria;

关键词: Metal induced crystallization;    Epitaxy;    X-ray techniques;    Heterojunction;    Sputtering;   

DOI  :  

来源: DOAJ

【 摘 要 】

Metal induced crystallization using aluminum (Al) as catalytic metal was applied to achieve low-temperature crystallization of amorphous silicon (a-Si) on 4H-SiC. Epitaxial crystallization of Si grains was found to occur on off-axis 4H-SiC at very low temperatures using X-ray diffractometry (XRD). In-situ heating XRD measurements revealed an onset of the crystallization process at temperatures as low as 220 °C on Si- and C-face SiC, respectively. Cross-sectional imaging with scanning electron microscopy showed an almost complete layer transfer between Si and the Al metallization after annealing.

【 授权许可】

Unknown