Design of Low Inductance Busbar for 500 kVA Three-Level ANPC Converter

Gui, Handong ; Zhang, Zheyu ; Chen, Ruirui ; Niu, Jiahao ; Wang, Fred ; Tolbert, Leon M ; Costinett, Daniel J ; Blalock, Benjamin J ; Choi, Benjamin B

关键词: FIELD EFFECT TRANSISTORS;    SILICON CARBIDES;    LOOPS;    INDUCTANCE;    ELECTRIC POTENTIAL;   

RP-ID  :  GRC-E-DAA-TN68912

学科分类：航空航天科学

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

The adoption of SiC devices in high power applications enables higher switching speed, which requires lower circuit parasitic inductance to reduce the voltage overshoot. This paper presents the design of a busbar for a 500 kVA three-level active natural clamped converter. The layout of the busbar is discussed in detail based on the analysis of the multiple commutation loops, magnetic cancelling effect, and DC-link capacitor placement. The loop inductance of the designed busbar is verified with simulation, impedance measurements and converter experiment. The results can match with each other and the inductances of small and large loop are 6.5 nH and 17.5 nH respectively, which is significantly lower than the busbars of NPC type converters in other references.