Modeling of Multi-Loops Related Device Turn-On Overvoltage in 3L-ANPC Converters

Gui, Handong ; Chen, Ruirui ; Niu, Jiahao ; Tolbert, Leon M ; Wang, Fred ; Costinett, Daniel J ; Blalock, Benjamin J ; Choi, Benjamin B

关键词: CAPACITANCE;    COMMUTATION;    ELECTRIC POTENTIAL;    INDUCTANCE;    FIELD EFFECT TRANSISTORS;    LOOPS;    MATHEMATICAL MODELS;    METAL OXIDE SEMICONDUCTORS;    OVERVOLTAGE;    PHASE SHIFT CIRCUITS;    SWITCHES;   

RP-ID  :  GRC-E-DAA-TN68909

学科分类：电子与电气工程

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

The analytical model for the device drain-source turn-on overvoltage in three-level active neutral point clamped (3L-ANPC) converters is established in this paper. Considering the two commutation loops in the converter, the relationship between the overvoltage and the loop inductances is evaluated. The line switching frequency device usually exhibits higher overvoltage, while the high switching frequency device is not strongly influenced by the multiple loops. A 500 kVA 3L-ANPC converter using SiC MOSFETs is tested, and the model is verified with the experimental results.