High Performance InGaAsSb TPV Cells

Shellengarger, ZA ; Taylor, GC ; Martinelli, RU ; Carpinelli, JM

Lockheed Martin

关键词: Removal;    Orientation;    Recombination;    Carrier Lifetime;    42 Engineering;   

DOI  :  10.2172/837460
RP-ID  :  LM-04K048
RP-ID  :  AC 12-00-SN39357
RP-ID  :  837460

美国|英语

来源: UNT Digital Library

【 摘 要 】

Lattice-matched 0.52 eV InGaAsSb/GaSb thermophotovoltaic (TPV) cells are grown using a multi-wafer metal-organic-chemical-vapor-deposition (MOCVD) system. MOCVD growth series of P/N junction epitaxial structures consisting of as many as 30 wafers demonstrate good run-to-run reproducibility, good uniformity across the wafer and exhibit high performance with open circuit voltages of {approx}300mV and fill factors of 70% at 25 C. Growth parameters, including temperature, surface preparation and substrate orientation, that directly affect growth have been optimized for the active 0.52 eV InGaAsSb region and GaSb confinement layers. Focus is on increasing TPV diode performance through architectural improvements, specifically by reducing the minority carrier recombination velocity at the emitter and base front and back interfaces. Work in support of incorporating a back surface reflector (BSR) including the growth of N/P diode architectures and the addition of a lattice-matched InAsSb etch stop layer for substrate removal and wafer bonding, is reported. The lattice matched InAsSb stop etch exhibits resiliency to the substrate removal and wafer bonding processes. Substantial improvement in carrier lifetime on test structures with P-type AlGaAsSb layers indicated incorporation of these layers into the TPV cell structure should provide significant improvement in open-circuit voltage. Addition of AlGaAsSb confinement layers to the standard P/N cell structure gave some of the best InGaAsSb TPV cell results to date.