Analysis of Recombination Processes in 0.5 - 0.6eV Epitaxial GaInAsSb Lattice-Matched to GaSb

Donetsky, D ; Anikeev, S ; Ning, G ; Belenky, G ; Luryi, S ; Wang, CA ; Shiau, DA ; Dashiell, M ; Beausang, J ; Nichols, G

Lockheed Martin Corporation, Schenectady, NY (United States)

关键词: Photons;    Recycling;    Recombination;    Carrier Lifetime;    42 Engineering;   

DOI  :  10.2172/836452
RP-ID  :  LM-04K038
RP-ID  :  AC12-00SN39357
RP-ID  :  836452

美国|英语

来源: UNT Digital Library

【 摘 要 】

After a brief introduction and work motivation, static and dynamic methods for minority carrier lifetime measurements will be compared. Data on recombination velocity at heterointerfaces for both p-type and n-type quaternaries will be summarized. Radiative recombination and effect of photon recycling will be considered in detail.