Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

Donetsky, D ; Anikeev, S ; Gu, N ; Belenky, G ; Luryi, S ; Wang, CA ; Shiau, DA ; Dashiell, M ; Beausang, J ; Nichols, and G

Lockheed Martin

关键词: Excitation;    Recombination;    Carrier Lifetime;    42 Engineering;    Optimization;   

DOI  :  10.2172/837455
RP-ID  :  LM-04K044
RP-ID  :  AC 12-00-SN39357
RP-ID  :  837455

美国|英语

来源: UNT Digital Library

【 摘 要 】

This work summarizes recent data on minority carrier lifetime in n- and p-type double heterostructures (DHs) of 0.5-0.6 eV GaInAsSb confined with GaSb and AlGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination in GaSb/GaInAsSb/GaSb DHs is thermionic emission of carriers over the heterobarrier. Considerable improvement of carrier confinement was obtained with 1 eV AlGaAsSb cap layers. Optimization of the epitaxial growth resulted in a recombination velocity at GaInAsSb/AlGaAsSb interface as low as 30 cm/s.