Ohmic Contacts to n-type GaSb and n-type GaInAsSb

Huang, R.K. ; Wang, C.A. ; Harris, C.T. ; Connors, M.K. ; Shiau, D.A.

Lockheed Martin

关键词: 42 Engineering;    Substrates;    Gallium Compounds;    Electrons;   

DOI  :  10.2172/822096
RP-ID  :  LM-03K059
RP-ID  :  AC12-00SN39357
RP-ID  :  822096

美国|英语

来源: UNT Digital Library

【 摘 要 】

An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GaInAsSb and n-GaSb samples with varying doping, grown on both n-GaSb and semi-insulating GaAs substrates. These samples were fabricated into mesa-etched TLM structures, and the specific contact resistivity and sheet resistance of these layers as a function of majority electron concentration were measured. Extremely low specific contact resistivities of about 2 x 10{sup -6} {Omega}-cm{sup 2} and sheet resistances of about 4 {Omega}/{open_square} are found for n-type GaInAsSb doped at about 3 x 10{sup 18} cm{sup -3}.