Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts

Wang, C.A. ; Shiau, D.A. ; Huang, R.K. ; Harris, C.T. ; Connors, M.K.

Lockheed Martin

关键词: Mass Spectroscopy;    42 Engineering;    Electrons;    Vapor Phase Epitaxy;    Electron Mobility;   

DOI  :  10.2172/821380
RP-ID  :  LM-03K074
RP-ID  :  AC12-00SN39357
RP-ID  :  821380

美国|英语

来源: UNT Digital Library

【 摘 要 】

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.