Performance Limits of Low Bandgap Thermophotovoltaic Antimonide-Based Cells for Low Temperature Radiators

Borrego, J.M. ; Wang, C.A. ; Dutta, P.S. ; rajagopalan, G. ; Bhat, I.B. ; Gutmann, R.J. ; Ehsani, H. ; Beausang, J.F. ; Nichols, G. ; Baldasaro, P.F.

Lockheed Martin Inc., Schenectady, NY 12301-1072 (United States)

关键词: 42 Engineering;    Substrates;    Diffusion;    Performance;    Radiators;   

DOI  :  10.2172/820720
RP-ID  :  LM-02K075
RP-ID  :  AC12-00SN39357
RP-ID  :  820720

美国|英语

来源: UNT Digital Library

【 摘 要 】

This paper assesses the performance of antimonide-based thermophotovoltaic cells fabricated by different technologies. In particular, the paper compares the performance of lattice matched quaternary (GaInAsSb) cells epitaxially grown on GaSb substrates to the performance of ternary (GaInSb) and binary (GaSb) cells fabricated by Zn diffusion on bulk substrates. The focus of the paper is to delineate the key performance advantages of the highest performance-to-date of the quaternary cells to the performance of the alternative ternary and binary antimonide-based diffusion technology. The performance characteristics of the cells considered are obtained from PC-1D simulations using appropriate material parameters.