Charge transport properties of CdMnTe radiation detectors

Kim K. ; Rafiel, R. ; Boardman, M. ; Reinhard, I. ; Sarbutt, A. ; Watt, G. ; Watt, C. ; Uxa, S. ; Prokopovich, D.A. ; Belas, E. ; Bolotnikov, A.E. ; James, R.B.

关键词: CADMIUM;    CHARGE COLLECTION;    CHARGE TRANSPORT;    EFFICIENCY;    ELECTRIC FIELDS;    ELECTRON MOBILITY;    ELECTRONS;    FABRICATION;    HEAVY ION ACCELERATORS;    MANGANESE TELLURIDES;    RADIATION DETECTORS;    SPECTROSCOPY;    TELLURIUM;    TRANSIENTS;    VELOCITY transport;    properties;    CdMnTe;    radiation;    detectors;   

DOI  :  10.2172/1044754
RP-ID  :  BNL--98031-2012
PID  :  OSTI ID: 1044754
Others  :  Other: NN2001000
Others  :  TRN: US1203563

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来源: SciTech Connect

【 摘 要 】

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.