Voltage-controlled magnetoresistance of magnetite film in Fe3O4/Si structure at room temperature

JOURNAL OF ALLOYS AND COMPOUNDS

卷:657

Article

Wang, Xianjie¹  Song, Bingqian¹  Zhang, Yu¹  Lv, Zhe¹  Hu, Chang¹  Liu, Zhiguo¹  Wen, Jiahong¹  Sui, Yu¹  Han, Yaping²  Tang, Jinke³  Song, Bo^1,4 

[1] Harbin Inst Technol, Dept Phys, Harbin 150001, Peoples R China

[2] Northeast Forestry Univ, Dept Phys, Harbin 150040, Peoples R China

[3] Univ Wyoming, Dept Phys & Astron, Laramie, WY 82071 USA

[4] Harbin Inst Technol, Acad Fundamental & Interdisciplinary Sci, Harbin 150001, Peoples R China

关键词: Magnetoresistance;    Spin polarized transport;    Spin polarized field effect transistors;   

DOI  :  10.1016/j.jallcom.2015.10.130

来源: Elsevier

【 摘 要 】

In this paper, we investigate the voltage-controlled magnetoresistance (MR) of Fe3O4/Si structure prepared with pulsed laser deposition. The temperature dependence of resistance and non-linear I-V curve at room temperature suggest that the measured resistance is strongly influenced by the applied voltage and/or the current. The MR was observed to be dependent upon both the applied voltage and the angle between the magnetic field and the current. A greatly magnified low field negative MR similar to -4% was achieved at 300 K and 500 Oe up to 3.0 V in the Fe3O4/Si structure, which originated from the release of charge accumulation at the Fe3O4/Si interface under the applied magnetic field due to the negative MR of Fe3O4. (C) 2015 Elsevier B.V. All rights reserved.

【 授权许可】

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