Taming the resistive switching in Fe/MgO/V/Fe magnetic tunnel junctions: An ab initio study

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:372

Article

Aguiar-Hualde, J. M.¹  Alouani, M.² 

[1] CEA Saclay, IPhT, F-91190 Gif Sur Yvette, France

[2] CNRS UdS, IPCMS, UMR 7504, F-67034 Strasbourg, France

关键词: Fe/MgO;    Switching;    Magnetic tunnel junction;    Magnetoresistance;    Ab initio;    Conductance;    LDA;    Smeagol;    Siesta;   

DOI  :  10.1016/j.jmmm.2014.07.063

来源: Elsevier

【 摘 要 】

A possible mechanism for the resistive switching observed experimentally in Fe/MgO/V/Fe junctions is presented. Ab initio total energy calculations within the local density approximation and pseudopotential theory shows that by moving the oxygen ions across the MgO/V interface one obtains a metastable state. It is argued that this state can be reached by applying an electric held across the interface. In addition, the ground state and the metastable state show different electric conductances. The latter results are discussed in terms of the changes of the density of states at the Fermi level and the charge transfer at the interface due to the oxygen ion motion. (C) 2014 Elsevier B.V. All rights reserved.

【 授权许可】

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