Spin Valve Effect in Ferromagnet-Superconductor-Ferromagnet Single Electron Transistor

Magnetoresistance;Nanotechnology;Single electron transitor;Spintronics

Anaya, Armando Alonso ; Physics

University:Georgia Institute of Technology

Department:Physics

关键词: Magnetoresistance;    Nanotechnology;    Single electron transitor;    Spintronics;   

Others  :  https://smartech.gatech.edu/bitstream/1853/6864/1/anaya_armando_a_200505_phd.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

This thesis describes a research of suppression of superconducting gap in a superconducting island of a Ferromagnetic-Superconducting-Ferromagnetic Single-Electron-Transistor due to the fringing magnetic fields produced by the ferromagnetic leads. The devices are working below the critical temperature of the superconducting gap. A model is proposed to explain how the fringing magnetic field produced by the leads is strong enough to suppress the superconducting gap. The peak of the fringing magnetic field produced by one lead reaches 5000 oe. It is observed an inverse tunneling magneto resistance during the suppression of the superconducting gap, obtaining a maximum absolute value 500 times greater than the TMR in the normal state where the efficiency of the spin injection is low.It is concluded that the suppression of the superconducting gap is due to fringing magnetic field and not to the spin accumulation because the low efficiency of the spin injection. It is suggested a new geometry to reduce the effect of the fringing magnetic field so it can be obtained a suppression of the superconductivity due to the spin accumulation. It is described the qualitatively behavior of the IV characteristic when the suppression of the superconductivity is due to spin accumulation.