Intense ultraviolet photoluminescent emission from Yb doped ZnO thin films on Si after high temperature annealing

JOURNAL OF ALLOYS AND COMPOUNDS

卷:695

Article

Heng, C. L.¹  Wang, T.¹  Su, W. Y.¹  Wu, H. C.¹  Yang, M. C.¹  Deng, L. G.¹  Yin, P. G.²  Finstad, T. G.³ 

[1] Beijing Inst Technol, Sch Phys, Minist Educ, Key Lab Cluster Sci, Beijing 100081, Peoples R China

[2] Beihang Univ, Sch Chem & Environm, Minist Educ, Key Lab Bioinspired Smart Interfacial Sci & Techn, Beijing 100191, Peoples R China

[3] Univ Oslo, Dept Phys, POB 1048, N-0316 Oslo, Norway

关键词: ZnO;    UV luminescence;    Yb;    Thin film;    Silicates;    Magnetron sputtering;   

DOI  :  10.1016/j.jallcom.2016.11.072

来源: Elsevier

【 摘 要 】

We report that the near band edge ultra-violet (UV) emission of ZnO sputtered films on Si can be enhanced greatly by incorporating about 5 at.% ytterbium in the films (ZnO + YbO). After annealing at 1100 degrees C in N-2, the UV peak intensity at around 380 nm was hundred times stronger from ZnO + YbO than from un-doped ZnO. The as-deposited ZnO + YbO film is amorphous and forms ZnO crystal grains by annealing above 700 degrees C. After 1100 degrees C annealing reactions with Si substrate have induced Zn silicates and Yb silicates and left embedded ZnO nanocrystals and Yb2O3 nano crystals on the surface as observed by X-ray diffraction, high resolution transmission electron microscopy and scanning electron microscopy together with energy dispersive electron spectroscopy. The photoluminescence (PL), PL excitation and PL decay spectra indicate that excitation energy is transferred between parts of the surrounding silicates, the Yb-oxides and the ZnO nanocrystals, while the energy transfer to Yb3+ is not efficient. (C) 2016 Elsevier B.V. All rights reserved.

【 授权许可】

Free