Structured ZnO-based contacts deposited by non-reactive rf magnetron sputtering on ultra-thin SiO2/Si through a stencil mask

THIN SOLID FILMS

卷:518

Article; Proceedings Paper

Barnabe, A.¹  Lalanne, M.¹  Presmanes, L.¹  Soon, J. M.¹  Tailhades, Ph.¹  Dumas, C.²  Grisolia, J.²  Arbouet, A.^3,4  Paillard, V.^3,4  BenAssayag, G.^3,4  van den Boogaart, M. A. F.⁵  Savu, V.⁵  Brugger, J.⁵  Normand, P.⁶ 

[1] Univ Toulouse, CIRIMAT, UPS INP, CNRS, F-31062 Toulouse, France

[2] Univ Toulouse, LPCNO, INSA UPS, CNRS, F-31077 Toulouse, France

[3] CNRS, CEMES, F-31055 Toulouse, France

[4] Univ Toulouse, Grp nMat, F-31055 Toulouse, France

[5] Ecole Polytech Fed Lausanne, Lab Microsyst, CH-1015 Lausanne, Switzerland

[6] NCSR Demokritos, Inst Microelect, Aghia Praskevi 15310, Greece

关键词: Thin film;    Nanostructure;    Stencil mask;    ZnO;    Si;    SiO2;   

DOI  :  10.1016/j.tsf.2009.03.232

来源: Elsevier

【 摘 要 】

In this paper, we study the localized deposition of ZnO micro and nanostructures deposited by non-reactive rf-magnetron sputtering through a stencil mask on ultra-thin (10 nm) SiO2 layers containing a single plane of silicon nanocrystals (NCs), synthetized by ultra-low energy ion implantation followed by thermal annealing. The localized ZnO-deposited areas are reproducing the exact stencil mask patterns. A resistivity of around 5 x 10(-3) Omega cm is measured on ZnO layer. The as-deposited ZnO material is 97% transparent above the wavelength at 400 nm. ZnO nanostructures can thus be used as transparent electrodes for Si NCs embedded in the gate-oxide of MOS devices. (C) 2009 Elsevier B.V. All rights reserved.

【 授权许可】

Free