Electronic stopping in molecular dynamics simulations of cascades in 3C-SiC

JOURNAL OF NUCLEAR MATERIALS

卷:540

Article

Zarkadoula, Eva¹  Samolyuk, German¹  Zhang, Yanwen¹  Weber, William J.^1,2 

[1] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[2] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

关键词: Radiation damage;    Silicon carbide;    Molecular dynamics;    Electronic stopping;    Electronic effects;   

DOI  :  10.1016/j.jnucmat.2020.152371

来源: Elsevier

【 摘 要 】

We investigate the effect of the electronic stopping power on defect production due to ion irradiation of cubic silicon carbide using molecular dynamics simulations. We simulate 20 keV and 30 keV Si and C ions, with and without the electronic energy loss. The results show that the electronic stopping effects are more profound in the case of C irradiation, where the ratio of the electronic energy loss S-e to the nuclear energy loss S-n is much larger compared to the ratio for Si ions. These findings indicate that this ratio plays a role in the effect of the electronic stopping on ion irradiation. Published by Elsevier B.V.

【 授权许可】

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