Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:299

Article

Kundaliya, DC ; Ogale, SB ; Dhar, S ; McDonald, KF ; Knoesel, E ; Osedach, T ; Lofland, SE ; Shinde, SR ; Venkatesan, T

关键词: thin films;    GaFeO3;    MOKE;    pulsed laser deposition;    magnetization;   

DOI  :  10.1016/j.jmmm.2005.04.017

来源: Elsevier

【 摘 要 】

Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (001) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 Oil Si (100) Substrate. The ferromagnetic transition temperature (T-C similar to 215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of similar to 15 degrees in the ferromagnetic state. (c) 2005 Elsevier B.V. All rights reserved.

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