Pulsed Laser Ablation: A Facile and Low-Temperature Fabrication of Highly Oriented n-Type Zinc Oxide Thin Films

Applied Sciences

Mihai Alexandru Ciolan¹  Iuliana Motrescu² 

[1] Research Center on Advanced Materials and Technologies, Department of Exact and Natural Science, Institute of Interdisciplinary Research, Alexandru Ioan Cuza University of Iasi, Blvd. Carol I, no. 11, 700506 Iasi, Romania;Science Department & Research Institute for Agriculture and Environment, Iasi University of Life Sciences, 3 Sadoveanu Alley, 700490 Iasi, Romania;

关键词: thin films;    zinc oxide;    pulsed laser deposition;    optical properties;   

DOI  :  10.3390/app12020917

来源: DOAJ

【 摘 要 】

Eco-friendly and facile zinc oxide (ZnO) synthesis of zinc-oxide-based nanomaterials with specific properties is a great challenge due to its excellent industrial applications in the field of semiconductors and solar cells. In this paper, we report the production of zinc oxide thin films at relatively low deposition temperature employing a simple and non-toxic method at low substrate temperature: pulsed laser ablation, as a first step for developing a n-ZnO/p-Si heterojunction. Single-phase n-type zinc oxide thin films are confirmed by an X-ray diffraction (XRD) pattern revealed by the maximum diffraction intensity from the (002) plane. Absorbance measurements indicate an increase in the band gap energy close to the bulk ZnO. A 350 °C substrate temperature led to obtaining a highly porous film with high crystallinity and high bandgap, showing good premises for further applications.

【 授权许可】

Unknown