A Comparison of Processes and Challenges Between Organic, a-Si:H, and

de la Fuente Vornbrock, Alejandro ; Almanza-Workman, Marcia ; Dickin, Fraser ; Elder, Richard E. ; Garcia, Robert A. ; Holland, Edward ; Jackson, Warren ; Jam, Mehrban ; Jeans, Albert ; Kim, Han-Jun ; Kwon, Ohseung ; Luo, Hao ; Maltabes, John ; Mei, Ping ; Perlov, Craig ; Rudin, John C. ; Smith, Mark ; Trovinger, Steven ; Zhao, Lihua ; Taussig, Carl P.

HP Development Company

关键词: flexible electronics;    thin film transistors;    flexible displays;    organic semiconductors;    amorphous silicon;    zinc oxide;   

RP-ID  :  HPL-2012-66

学科分类：计算机科学（综合）

美国|英语

来源: HP Labs

【 摘 要 】

Processes to produce active-matrix backplanes on plastic substrates have been developed utilizing a- Si:H, multi-component oxide, and organic semiconductor technologies. The suitability of these technologies for future flat panel display applications is discussed. Of these material systems multi-component oxides exhibit highest field-effect mobilities (10cm2/Vs for zinc tin oxide demonstrated), followed by small molecule organic semiconductors (0.95 cm2/Vs), and a-Si:H (0.5 cm2/Vs). Yet despite higher mobilities, organic TFTs drive less current than a- Si:H because of the low device capacitances required to fabricate such devices. Backplanes made with a-Si:H appear to be the least risky technology, followed by multi-component oxide, and organic semiconductor technologies.