Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

Advanced Science

Jingsheng Chen¹  Rui Guo¹  Ruiting Zhao²  Tianqi Lu²  Houfang Liu²  Jingzhou Li²  Zhenyi Ju²  Tian‐Ling Ren²  Hainan Zhang²  Yi Yang²  Yuxing Li²  Minghao Shao²  Renrong Liang²  Xiao Renshaw Wang³ 

[1] Department of Materials Science and Engineering National University of Singapore Singapore 117575 Singapore;Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China;School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798 Singapore;

关键词: ferroelectric materials;    flexible electronics;    nonvolatile memory;    quasi‐van der Waals heteroepitaxy;    thin film transistors;   

DOI  :  10.1002/advs.202001266

来源: DOAJ

【 摘 要 】

Abstract Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain great challenges, e.g., owing to Pb‐containing materials, oxide electrode, and limited thermal stability. Here, high‐performance flexible nonvolatile memories based on ferroelectric Hf0.5Zr0.5O2 (HZO) via quasi‐van der Waals heteroepitaxy are reported. The flexible ferroelectric HZO exhibits not only high remanent polarization up to 32.6 µC cm−2 without a wake‐up effect during cycling, but also remarkably robust mechanical properties, degradation‐free retention, and endurance performance under a series of bent deformations and cycling tests. Intriguingly, using HZO as a gate, flexible ferroelectric thin‐film transistors with a low operating voltage of ±3 V, high on/off ratio of 6.5  ×  105, and a small subthreshold slope of about 100 mV dec−1, which outperform reported flexible ferroelectric transistors, are demonstrated. The results make ferroelectric HZO a promising candidate for the next‐generation of wearable, low‐power, and nonvolatile memories with manufacturability and scalability.

【 授权许可】

Unknown