TiN film growth on misoriented TiN grains with simultaneous low-energy bombardment: Restructuring leading to epitaxy

THIN SOLID FILMS

卷:688

Article

Edstrom, D.^1,2  Sangiovanni, D. G.^1,3  Hultman, L.¹  Petrov, I^1,4,5  Greene, J. E.^1,4,5,6  Chirita, V¹ 

[1] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden

[2] Orebro Univ, Sch Sci & Technol, SE-70182 Orebro, Sweden

[3] Ruhr Univ Bochum, ICAMS, D-44780 Bochum, Germany

[4] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[5] Univ Illinois, Mat Sci Dept, Urbana, IL 61801 USA

[6] Natl Taiwan Univ Sci & Technol, Mat Sci Dept, Taipei 10607, Taiwan

关键词: Titanium nitride;    Molecular dynamics;    Film growth simulations;    Epitaxy;   

DOI  :  10.1016/j.tsf.2019.06.030

来源: Elsevier

【 摘 要 】

We perform large-scale molecular dynamics simulations of TiN deposition at 1200 K on TiN substrates consisting of under-stoichiometric (N/Ti = 0.86) misoriented grains. The energy of incoming Ti atoms is 2 eV and that of incoming N atoms is 10 eV. The simulations show that misoriented grains are reoriented during the early stages of growth, after which the film grows 001 epitaxially and is nearly stoichiometric. The grain reorientation coincides with an increase in film N/Ti ratio. As the grains reorient, additional nitrogen can no longer be accommodated, and the film composition becomes stoichiometric as the overlayer grows epitaxially.

【 授权许可】

Free