Residual stresses in titanium nitride thin films obtained with step variation of substrate bias voltage during deposition

SURFACE & COATINGS TECHNOLOGY

卷:204

Article

Gomez, A. G.¹  Recco, A. A. C.²  Lima, N. B.³  Martinez, L. G.³  Tschiptschin, A. P.²  Souza, R. M.¹ 

[1] Univ Sao Paulo, Surface Phenomena Lab, Dept Mech Engn, Polytech Sch, Sao Paulo, Brazil

[2] Univ Sao Paulo, Dept Met & Mat Engn, Polytech Sch, Sao Paulo, Brazil

[3] IPEN, Nucl & Energy Res Inst, Sao Paulo, Brazil

关键词: Magnetron sputtering;    Titanium nitride;    X-ray diffraction;    Stress gradients;   

DOI  :  10.1016/j.surfcoat.2010.03.016

来源: Elsevier

【 摘 要 】

In this work, a series of depositions of titanium nitride (TiN) films on M2 and D2 steel substrates were conducted in a Triode Magnetron Sputtering chamber. The temperature; gas flow and pressure were kept constant during each run. The substrate bias was either decreased or increased in a sequence of steps. Residual stress measurements were later conducted through the grazing X-ray diffraction method. Different incident angles were used in order to change the penetration depth and to obtain values of residual stress at different film depths. A model described by Dolle was adapted as an attempt to calculate the values of residual stress at each incident angle as a function of the value from each individual layer. Stress results indicated that the decrease in bias voltage during the deposition has produced compressive residual stress gradients through the film thickness. On the other hand, much less pronounced gradients were found in one of the films deposited with increasing bias voltage. (C) 2010 Elsevier B.V. All rights reserved.

【 授权许可】

Free