Resistive switching characteristics of multilayered (HfO2/Al2O3)n n=19 thin film

THIN SOLID FILMS

卷:520

Article; Proceedings Paper

Tzeng, Wen-Hsien²  Zhong, Chia-Wen²  Liu, Kou-Chen¹  Chang, Kow-Ming^2,3  Lin, Horng-Chih²  Chan, Yi-Chun¹  Kuo, Chun-Chih¹  Tsai, Feng-Yu⁴  Tseng, Ming Hong⁴  Chen, Pang-Shiu⁵  Lee, Heng-Yuan⁶  Chen, Frederick⁶  Tsai, Ming-Jinn⁶ 

[1] Chang Gung Univ, Inst Elect Engn, Tao Yuan 33302, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Inst Elect, Hsinchu 30010, Taiwan

[3] I Shou Univ, Dept Elect Engn, Kaohsiung 840, Taiwan

[4] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10764, Taiwan

[5] Minghsin Univ Sci & Technol, Hsinchu 340, Taiwan

[6] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 310, Taiwan

关键词: Multilayer;    Stacked oxide;    Resistive memory;    RRAM;   

DOI  :  10.1016/j.tsf.2011.10.118

来源: Elsevier

【 摘 要 】

A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO2/Al2O3/center dot center dot center dot/HfO2/Al2O3/ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons. Crown Copyright (c) 2011 Published by Elsevier B.V. All rights reserved.

【 授权许可】

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