Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method

Materials

卷:10

Shou-Jen Huang¹  Kai-Huang Chen¹  Ming-Cheng Kao²  Jian-Zhi Li³ 

[1] Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 82941, Taiwan;

[2] Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan;

[3] Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan;

关键词: SCF;    bipolar switching properties;    neodymium oxide;    thin film;    RRAM;   

DOI  :  10.3390/ma10121415

来源: DOAJ

【 摘 要 】

Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd2O3) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post-treatment process were investigated. Electrical and physical properties improvement of Nd2O3 thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and current versus voltage (I-V) measurement. The metal-like behavior of ohmic conduction mechanism and metallic cluster reaction of hopping conduction mechanism in initial metallic filament path forming process of the SCF-treated thin films RRAM devices was assumed and discussed. Finally, the electrical conduction mechanism of the thin films RRAM derives for set/reset was also discussed and verified in filament path physical model.

【 授权许可】

Unknown