Aluminium incorporation in AlxGa1-xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

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Article

Redondo-Cubero, A.^1,2,3  Gago, R.¹  Gonzalez-Posada, F.^2,3  Kreissig, U.⁴  Poisson, M. -A. di Forte⁵  Brana, A. F.^2,3  Munoz, E.^2,3 

[1] Univ Autonoma Madrid, Ctr Microanal Mat, E-28049 Madrid, Spain

[2] Univ Politecn Madrid, ISOM, E-28040 Madrid, Spain

[3] Univ Politecn Madrid, Dpt Ingn Elect, ETSI Telecomunicac, E-28040 Madrid, Spain

[4] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[5] Thales Res & Technol TIGER, F-91461 Marcoussis, France

关键词: AlGaN;    HEMT;    RBS;    ERDA;    XRD;   

DOI  :  10.1016/j.tsf.2008.04.069

来源: Elsevier

【 摘 要 】

The Al content in AlxGa1-xN/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1<0.3 grown by metal organic chemical vapour deposition on sapphire substrates have been studied. XRD and IBA corroborate the good epitaxial growth of the AlGaN layer, which slightly deteriorates with the incorporation of Al for x>0.2. The assessment of Al incorporation by XRD is quite reliable regarding the average value along the sample thickness. However, XRD analysis tends to overestimate the Al fraction at low contents, which is attributed to the presence of strain within the layer. For the highest Al incorporation, IBA detects a certain Al in-depth compositional profile that should be considered for better XRD data analysis. (C) 2008 Elsevier B.V. All rights reserved.

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