Iodine assisted retainment of implanted silver temperatures in 6H-SiC at high temperatures

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:334

Article

Hlatshwayo, T. T.¹  van der Berg, N. G.¹  Msimanga, M.²  Malherbe, J. B.¹  Kuhudzai, R. J.¹ 

[1] Univ Pretoria, Dept Phys, Pretoria, South Africa

[2] NRF iThemba LABS Gauteng, ZA-2050 Johanesburg, South Africa

关键词: RBS;    ERDA;    SEM;    Implantation;    Co-implantation;   

DOI  :  10.1016/j.nimb.2014.05.015

来源: Elsevier

【 摘 要 】

The effect of high temperature thermal annealing on the retainment and diffusion behaviour of iodine (I) and silver (Ag) both individually and co-implanted into 6H-SiC has been investigated using RBS, RBS-C and heavy ion ERDA (Elastic Recoil Detection Analysis). Iodine and silver ions at 360 keV were both individually and co-implanted into 6H-SiC at room temperature to fluences of the order of I x 10(16) cm(-2). RBS analyses of the as-implanted samples indicated that implantation of Ag and of I and co-implantation of I-131 and Ag-109 at room temperature resulted in complete amorphization of 6H-SiC from the surface to a depth of about 290 nm for the co-implanted samples. Annealing at 1500 degrees C for 30 h (also with samples annealed at 1700 degrees C for 5 h) caused diffusion accompanied by some loss of both species at the surface with some iodine remaining in the iodine implanted samples. In the Ag implanted samples, the RBS spectra showed that all the Ag disappeared. SEM images showed different recrystallization behaviour for all three sets of samples, with larger faceted crystals appearing in the SiC samples containing iodine. Heavy Ion ERDA analyses showed that both Ag-109 and I-131 remained in the co-implanted SiC samples after annealing at 1500 degrees C for 30 h. Therefore, iodine assisted in the retainment of silver in SiC even at high temperature. (C) 2014 Elsevier B.V. All rights reserved.

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