Temperature dependence of oriented growth of Pb[Yb1/2Nb1/2]O3-PbTiO3 thin films deposited on LNO/Si substrates

THIN SOLID FILMS

卷:517

Article

Zhou, Q. F.^1,2  Shung, K. K.^1,2  Zhang, Q. Q.³  Djuth, F. T.³ 

[1] Univ So Calif, NIH Transducer Resource Ctr, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Biomed Engn, Los Angeles, CA 90089 USA

[3] Geospace Res Inc, El Segundo, CA 90245 USA

关键词: Piezoelectric films;    Sol-gel deposition;    Oriented growth;    X-ray diffraction;   

DOI  :  10.1016/j.tsf.2008.08.004

来源: Elsevier

【 摘 要 】

(1-x)Pb[Yb1/2Nb1/2]O-3-xPbTiO(3) (PYbN-PT,x=0.5) (001)oriented thin films were deposited onto LaNiO3 (LNO)/Si (001) substrates by sol-gel processing. The crystallographic texture of the films was controlled by the annealing temperature and heating rate. Highly (001) oriented LNO thin films were prepared by a simple metal organic decomposition technique, and the samples were annealed at 700 degrees C and 750 degrees C using a rapid thermal annealing process and furnace, respectively. X-ray diffraction analysis revealed that the films of PYbN-PT were highly (001) oriented along LNO/Si substrates. The degree of PYbN-PT orientation is dependent on the heating rate and annealing temperature. Annealing heating rate of 10 degrees C/s and high annealing temperature near 750 degrees C produce the greatest degree of(001) orientation, which gives rise to improved dielectric properties. (C) 2008 Elsevier B.V. All rights reserved.

【 授权许可】

Free