Approach to form planar structures based on epitaxial Fe1 - xSix films grown on Si(111)

THIN SOLID FILMS

卷:642

Article

Tarasov, A. S.^1,2  Lukyanenko, A. V.^1,2  Tarasov, I. A.¹  Bondarev, I. A.^1,2  Smolyarova, T. E.^1,2  Kosyrev, N. N.¹  Komarov, V. A.^1,2  Yakovlev, I. A.¹  Volochaev, M. N.^1,3  Solovyov, L. A.⁴  Shemukhin, A. A.⁵  Varnakov, S. N.¹  Ovchinnikov, S. G.^1,2  Patrin, G. S.^1,2  Volkov, N. V.¹ 

[1] Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia

[2] Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia

[3] Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia

[4] Fed Res Ctr KSC SB RAS, Inst Chem & Chem Technol, Krasnoyarsk 660036, Russia

[5] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia

关键词: Iron silicides;    Wet etching;    Planar structures;    MOKE microscopy;   

DOI  :  10.1016/j.tsf.2017.09.025

来源: Elsevier

【 摘 要 】

An approach to form planar structures based on ferromagnetic Fe-1 - Si-x(x) films is presented. Epitaxial Fe-1 - Si-x(x) iron-silicon alloy films with different silicon content (x = 0-0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1:2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.

【 授权许可】

Free