Effect of the duration of a wet KCN etching step and post deposition annealing on the efficiency of Cu2ZnSnSe4 solar cells

THIN SOLID FILMS

卷:633

Article; Proceedings Paper

Sahayaraj, Sylvester^2,3,4  Brammertz, Guy^1,2  Vermang, Bart^3,4  Ranjbar, Samaneh^2,3,5  Meuris, Marc^1,2  Vleugels, Jef⁶  Poortmans, Jef^2,3,4 

[1] Imec Div IMOMEC Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium

[2] Hasselt Univ, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium

[3] Imec Partner Solliance, Kapeldreef 75, B-3001 Leuven, Belgium

[4] Katholieke Univ Leuven, Dept Elect Engn ESAT, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium

[5] Univ Aveiro, Dept Fis I3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal

[6] Katholieke Univ Leuven, Dept Mat Engn MTM, Kasteelpk Arenberg 44, B-3001 Heverlee, Belgium

关键词: KCN solution;    Surface degradation;    Post deposition annealing;    Bulk defect density;    Wet etching;    Copper zinc tin selenide;   

DOI  :  10.1016/j.tsf.2016.09.055

来源: Elsevier

【 摘 要 】

The influence of the duration of the KCN etching step on the efficiency of Cu2ZnSnSe4 (CZTSe) solar cells and Post deposition annealing (PDA) has been explored. CZTSe thin film absorbers prepared by selenization at 450 degrees C were etched by 5 wt% KCN/KOH from 30s up to 360 s before solar cell processing. KCN etching times above 120 s resulted in poor efficiencies. The fill factor (FF) and short circuit current density Jsc) of these devices were affected severely. After annealing the solar cells at 200 degrees C in N-2 atmosphere the best devices degraded and poor devices improved. Combined physical and optoelectronic characterization of the solar cells showed that PDA modifies the bulk defect density and also surface composition which reflects in the solar cell performance. (C) 2016 Elsevier B.V. All rights reserved.

【 授权许可】

Free